ALUMINUM NITRIDE-BASED SINTERED PRODUCT, METAL-EMBEDDED ARTICLE AND DEVICE FOR HOLDING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a compact aluminum nitride-based sintered product exhibiting a high volume resistivity even in a high temperature region. SOLUTION: This aluminum nitride-based sintered product contains aluminum nitride as a main component, has the polycrystalline structure of aluminum nitride crystals, and contains lithium in an amount of >=100-500 ppm converted into the oxide in the sintered product. The volume resistivity of the sintered product is preferably >=1.0×107 Ω.cm at 700 deg.C.