| 摘要 |
A two-layer buried oxide enables fabrication of a silicon-on-insulator MOSFET with thick-film source/drain regions and a thin-film channel region. After a hole has been etched in the substrate above a first buried oxide layer (i.e., in the upper substrate), oxygen is implanted to form a second buried layer within the substrate below the first buried layer (i.e., within the lower substrate). After a hole (aligned with the hole through the upper substrate) has been etched in the first buried layer, p-type dopants are implanted to form upper doped regions within the upper substrate to either side of the holes and a lower doped region within the lower substrate below the holes but above the second buried layer. An epitaxial layer roughly as thick as first buried layer is grown on the upper and lower substrates, a conformal insulating film is deposited onto the epitaxial layer, and a gate electrode is formed on the on the insulating film. Implantation of n-type dopants into both the epitaxial layer and the upper substrate to either side of the holes completes fabrication of the silicon-on-insulator device.
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