Planarized growth of III-V compound

摘要

A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate having a step on a surface thereof and growing a group III-V compound semiconductor layer on a surface of the semiconductor substrate by metal organic vapor phase epitaxy using a source gas added with halogenated hydrocarbon containing one or two halogen atoms per one molecule. The surface of a substrate with a step thereon can be planarized by depositing an embedding layer on a lower level area.