发明名称 |
Magnetic sensor and method for fabricating the same |
摘要 |
An In x Ga 1-x As y Sb 1-y (0 < x ‰¦ 1, 0 ‰¦ y ‰¦ 1) thin film of an electron concentration of 2 × 10 16 /cm 3 or more is formed on a dielectric substrate. Temperature dependence of resistance is controlled by composition setting or donor atom doping of the thin film to reduce the temperature dependence. As a result, a magnetic sensor of small temperature dependence of device resistance and high sensitivity can be provided. |
申请公布号 |
AU5066599(A) |
申请公布日期 |
2000.02.28 |
申请号 |
AU19990050665 |
申请日期 |
1999.08.06 |
申请人 |
ASAHI KASEI KOGYO KABUSHIKI KAISHA |
发明人 |
ICHIRO SHIBASAKI;ATSUSHI OKAMOTO;TAKASHI YOSHIDA;ICHIRO OKADA |
分类号 |
G01R33/06;G01R33/09;H01L43/10 |
主分类号 |
G01R33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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