发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor device is provided to form a contact stably and to contain a structure for repressing a contact resistance of the contact. CONSTITUTION: A semiconductor device includes; a wiring pattern(34); a nitride film upper unit wall(36) formed on the wiring pattern; a nitride film side wall(38) formed on the side surface of the wiring pattern; a contact(44) formed to an insulated state from the wiring pattern by the nitride film upper unit wall and the nitride film side wall; and an oxide film(46) formed in the lower side of the wiring pattern for containing a low surface in the location lower than the low surface of the nitride film side wall. Therefore, the side section of the oxide film is formed on the location which is pulled in toward the wiring pattern than the surface of the nitride film side wall, and the contact is in the low unit of the nitride film side wall for preventing a short of a proton.
申请公布号 KR20000011203(A) 申请公布日期 2000.02.25
申请号 KR19990008531 申请日期 1999.03.13
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 DERAUCHI TAKASHI;SHINKAWATA HIROKI
分类号 H01L21/28;H01L21/60;H01L21/768;H01L21/8242;(IPC1-7):H01L21/28 主分类号 H01L21/28
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