| 摘要 |
PROBLEM TO BE SOLVED: To enable a III nitride mixed crystal film prescribed in a mixed crystal ratio and uniform in quality to be formed being less affected by a parasitic reaction by a method wherein ammonia gas and organic gallium gas are previously mixed together, guided toward a substrate, mixed with organic aluminum gas in the vicinity of the substrate, and then fed onto the substrate. SOLUTION: Trimethyl aluminum(TMA) and trimethyl gallium(TMG) as III raw material are diluted with carrier gas and transferred into a flow channel 8 through a first gas inlet tube 11 and/or a second gas inlet tube 12. Ammonia (NH3) as III raw material is introduced into the flow channel 8 through a third gas inlet tube 13. A sapphire substrate 4 is placed on a graphite susceptor 3, and the susceptor 3 is high frequency-heated by an RF coil installed on a quartz reaction outer tube 14 circular in cross section. TWG, TMG, and NH3 are heated on the substrate, and an AlGaN crystal film is deposited on the substrate 4. |
