SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR CIRCUIT CONSISTING OF SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain excellent interface characteristics by forming an active layer consisting of a crystalline semiconductor film on a surface having insulating properties, a first insulating film on the active layer, a second insulating film on the first insulating film and a gate wiring on the second insulating film. SOLUTION: A base film having an insulating surface is formed onto a substrate 100. An initial semiconductor film 101 and a first gate insulating film 102 are formed continuously on the substrate or the base film. The base film, the initial semiconductor film 101 and the first gate insulating film 102a are preferably shaped continuously. Excellent interface characteristics can be obtained by forming the initial semiconductor film and continuously forming the first gate insulating film without exposure to the open air.