| 摘要 |
PROBLEM TO BE SOLVED: To improve the yield of products by quantifying the depth and width of a scratch by the standard sample for a false machined trace, calibrating the detection of the scratch by the scattered-light detector of semiconductor inspection and feeding back the calibrated detection to a semiconductor-device manufacturing process. SOLUTION: A plurality of blocks of collective patterns 65 consisting of a plurality of rows of pits 70-119, in which width and depth in various size are combined on a substrate surface, are worded and arrayed. The longitudinal direction of the pits 70-119 of the collective pattern 65 is set in length of the size or more of irradiation beams, the collective pattern 65 is extended from a wafer center of the outer circumference, and a plurality of blocks of the collective patterns 65 are arranged at radiant arbitrary radial places at arbitrary angles. Regular pitches are formed among the pits 70-119, and square-shaped pits 70, 72... composed of the width and depth of each pit are formed at the heads of the pits 70-119. Standard flaws are machined and prepared to product wafers from the combination of width and depth in various size, and calibrated at all times by the detection of scattered light.
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