| 摘要 |
PROBLEM TO BE SOLVED: To form an N+ and a P+ contact hole without using a photolithography process in a semiconductor device having a stacked capacitor structure. SOLUTION: A semiconductor device has on a semiconductor substrate a stacked capacitor structure constituted of a capacity contact hole 10, an N+ contact hole 21, and a P+ contact hole 30. The capacity contact hole 10 is constituted of a polysilicon layer doped with N type impurities. Thereon, a conductor layer 40 which will become a lower capacity electrode, a capacity insulation film 50, a capacity upper electrode 60, and interlayer insulation films 70, 80 are formed in order. The N+ contact hole 21 is filled with the conductor layer 40 which will become a lower capacity electrode and with a conductor layer 40 of the same quality. The P+ contact hole 30 is formed after the other contact holes are filled and is ion-implanted with P type semiconductor. During this process, the conductor layer 40 at the bottom of the N+ contact hole 21 is never transformed into P type. |
