| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a high performance photovoltaic module having an interconnect improved by a special fabrication method. SOLUTION: One or more thin film semiconductor 26 containing amorphous silicon is deposited between front and back contacts 20, 34. The contacts are arranged between a substrate and an arbitrarily selective super straight 44. During fabrication, the transparent conductive oxide layer of the front contact is scribed by laser and the inner layer of a double layer back contact is scribed simultaneously by laser to make a trench. Subsequently, the trench is filled with the same metal as the outer layer of the double layer back contact and excellent mechanical and electrical interconnection is provided between the front contact and the outer layer of the double layer back contact which is eventually scribed by laser. The photovoltaic module is sealed in a container for the purpose of environmental protection. |
