| 摘要 |
PURPOSE: An etching method of an upper and a lower layer is provided to reduce the analysis of H¬2O¬2, to control or maintain the temperature of the etching solution mixture and to minimize or reduce all of the re-evaporation of the Pb and the undercut of the whole metallizing stack. CONSTITUTION: The manufacturing method of a semiconductor is formed by the steps of: arraying an upper metal layer(502) made by soldering on a lower metal layer(201, 202) made up of titanium or tungsten; and selectively etching the lower metal layer(201, 202) to the upper metal layer(502) with an etching mixture(601) including an etching solution, an adding agent for controlling the temperature of the etching mixture(601) and other adding agent for reducing the re-evaporation of the upper layer(502). |
