发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A manufacturing method of a semiconductor device without the concentration of the thermal stress which exfoliates the electrode to the connecting unit with the printed board of the electrode or increases the contacting resistance is provided. CONSTITUTION: The manufacturing method of a semiconductor device is formed by; forming an insulating protection film(3) on the surface of a semiconductor substrate(1) forming an electrode pad(2) by eliminating the electrode pad(2); forming a metal wall(4) for painting the electrode pad(2); painting the surface of the semiconductor substrate(1) with a hard resin(5) by remaining a slot unit(6) for at least exposing a part of the metal wall(4); filling the slot unit(6) with the conductive material and forming a projecting unit on the unit(6); and forming the electrode by treating heat with the conductive material. |
申请公布号 |
KR20000011717(A) |
申请公布日期 |
2000.02.25 |
申请号 |
KR19990028519 |
申请日期 |
1999.07.14 |
申请人 |
TOSHIBA CO., LTD. |
发明人 |
YAMAZI YASUHIRO;HOSOMI EICHI |
分类号 |
H01L21/50;H01L21/60;H01L21/78;H01L23/12;H01L23/485 |
主分类号 |
H01L21/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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