| 摘要 |
PROBLEM TO BE SOLVED: To enhance the performance while reducing the cost of a photoelectric converter having a crystalline silicon based thin film photoelectric converting layer formed by a plasma CVD employing a low temperature process. SOLUTION: The silicon based thin film photoelectric converter comprises a substrate 1, a rear surface electrode 10 having a light reflecting metallic film 102, at least one silicon based photoelectric converting unit 11, and a surface transparent electrode 2 wherein at least one of the light reflecting metallic film 102 or the surface transparent electrode 2 has a corrugated surface on the side of the silicon based photoelectric converting unit. Corrugation is in the range of 0.01-2μm and the pitch is in the range of 1-25 times of corrugation.
|
