| 摘要 |
PROBLEM TO BE SOLVED: To completely remove slurry and metal particles left on the surface of a wafer after it is chemically and mechanically polished without causing damage to the surface of the wafer by a method wherein the surface of the wafer is scrubbed with alkaline colloid silica slurry whose pH is above a specific value and then scrubbed with deionized water after the wafer is mechanically and chemically polished. SOLUTION: First, a wafer is normally, chemically and mechanically polished in a CMP process 21. Then, the wafer is continuously scrubbed for cleaning with alkaline colloid silica slurry whose pH is above 10 for a short time in a cleaning/scrubbing process 22 and then cleaned with deionized(DI) water. In succession, in a standard finishing process 23, the wafer is scrubbed with the same slurry. Lastly, the wafer is rinsed with DI water and dried out in a rinse process 24. Alkaline colloid silica slurry is used in a cleaning/scrubbing process 22, whereby the contaminated wafer can be very effectively cleaned.
|
