| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser irradiation method for forming a large grain size polysilicon film in which grains are arranged well with uniform grain size distribution. SOLUTION: Same point of an amorphous semiconductor thin film is irradiated a plurality of times with pulse laser light having a rectangular irradiation area. Energy profile of the pulse laser light in the long side direction of irradiating area has first area equal to or higher than microcrystallization energy Ea of the amorphous semiconductor thin film and second area lower than the energy density Ea located on the opposite sides thereof. Absolute value of energy density gradient is set at 20-300 J/cm3 in the boundary area of 1μm from the boundary point of the first and second areas.
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