发明名称 VAPOR PHASE REMOVAL OF SiO2/METAL FROM SILICON
摘要 PROBLEM TO BE SOLVED: To eliminate contaminants at an inexpensive operating cost by simultaneously removing silicon oxide and metallic contaminants from the surface of a substrate, by introducingβ-diketone,β-diketoimine, or an oxygen-containing compound expressed by a specific structural formula which makes similar chemical reaction together with hydrogen fluoride anhydride. SOLUTION: Silicon oxide is removed from the surface of a substrate by introducingβ-diketoneβ-diketoimine, or an oxygen-bearing compound expressed by the formula (where, R1 and R3 are each independently a straight-chain or branched fluorinated and nonfluorinated 1-8C alkyl group, alkenyl group, etc., and R2 is a straight-chain or branched nonfluorinated 1-8C alkyl group or alkenyl group, and Y is selected from oxygen atom or N-R4 where R4 is a nonfluorinated 1-10C alkyl group, aryl group, etc.), which makes similar chemical action together with a hydrogen fluoride anhydride and, in addition, metallic contaminants on the surface of the substrate are removed after chelating the contaminants.
申请公布号 JP2000058505(A) 申请公布日期 2000.02.25
申请号 JP19990160766 申请日期 1999.06.08
申请人 AIR PROD AND CHEM INC 发明人 ROBERTSON ERIC ANTHONY III;BOHLING DAVID A;GEORGE MARK A;BECK SCOTT E
分类号 H01L21/302;H01L21/304;H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/302
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