| 摘要 |
PROBLEM TO BE SOLVED: To improve a process efficiency of a semiconductor wafer by shortening a time required for stabilizing of a processing rate and homogeneity after cleaning. SOLUTION: A semiconductor wafer is heated for process (for example, oxidation, diffusion, anneal, or CVD) in a process chamber. Here, an impurity combustion gas (for example, oxygen gas, or, both oxygen gas and hydrogen chloride group gas) is added to an inactive gas supplied into the process chamber at heating, during wait, when no wafer is introduced. The adding of gas is performed constantly or intermittently during a heating period while in waiting state. The gas adding may be performed at wafer delivery or temperature rising/falling as well as in wait. Adding of oxygen gas burns an organic contaminant and the hydrogen chloride or chlorine caused thereby or an added hydrogen chloride group gas changes a metal contaminant to an oxy-compound which is easy to sublimate, which is discharged to the outside of the process chamber.
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