| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of an inorganic mask for lateral direction epitaxial growth at low cost, without damaging a substrate as a substratum. SOLUTION: A GaN layer 2 is made to grow on a sapphire substrate 1, and a resist pattern 3 of a line and space shape is formed on the GaN layer 2. After an SiO2 film 4 is formed on the entire surface of the substrate, the resist pattern 3 is eliminated together with the SiO2 film 4 on the resist pattern 3, and the SiO2 film 4 as an inorganic mask is formed in a line and spatial shape on the GaN layer 2. It is also possible that a metal mask of a line and space shape which can be attracted with a magnet is arranged on a GaN layer, the metal mask is closely fixed on the GaN layer with magnetic force of the magnet arranged on the back side of the sapphire substrate 1, an SiO2 film is formed on the whole surface of the substrate in this state, and by removing the metal mask from the GaN layer, the SiO2 film as an inorganic mask is formed. By using the inorganic mask, the GaN layer 5 is grown epitaxially in the lateral direction.
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