DEVICE FOR FORMING CONTROLLED DEEP TRENCH UPPER INSULATION LAYER AND METHOD THEREOF

摘要

PURPOSE: A forming device for forming a deep trench upper insulation is provided to control the thickness of the insulation layer in a trench of a semiconductor memory for accurate operation of the semiconductor memory. CONSTITUTION: The control method of the thickness of insulation layer in a deep trench of a semiconductor memory has the steps of: providing a deep trench including a storage node having a filling strap; vapor depositing the insulation layer on the upper part of the filling strap to provide electric insulation to the storage node; forming a masking layer on the insulation layer to mask the insulation part contacted to the filling strap; removing the insulation except the part masked by the masking layer to improve the thickness control of the insulation layer.