NON-VOLATILE MEMORY DEVICE AND PRODUCTION METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device is provided to reduce the area occupied by an element, increase the coupling rate of the insulation film between gates, and increase the voltage fed to a floating fate. CONSTITUTION: The non-volatile memory device comprises: a common source area(400) between the 1st and 2nd floating gates(255); a control gate overlapped with the 1st and 2nd floating fates(255) and functions as a word line; and an integrated insulation film interposed between the control gate and the 1st and 2nd floating gate. The 1st memory cell includes the 2nd floating gate interposed with the 1st tunneling insulation film on the semiconductor substrate. The 2nd memory cell includes the 1st floating fate interposed with the 2nd tunneling insulation film on the semiconductor substrate.