发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To form a power source wiring on a narrow region with higher degree of freedom in design by forming an X-direction part of first and second wirings at one wiring layer while a Y-direction part at other wiring layer whose position is different from that one wiring layer. SOLUTION: Wiring patterns are connected each other with sides 14z and 15z shared in the region between core circuits 1 and 2, resulting in wirings 14 and 15 of lattice shape formed, with the core circuits 1 and 2 comprised in each frame. The wirings 14 and 15 are formed where the top-view shape of any one wiring is moved along the diagonal line connecting facing two points, in square, of the core circuits 1 or 2. The wiring 14 is connected to an installation terminal VSS while the wiring 15 to a power source terminal VDD. Since the power source wiring of the core circuits 1 and 2 are connected each other through the shared wirings 14z and 15z, the wiring region between the two core circuits 1 and 2 is significantly reduced, so, the degree of freedom in design is raised for higher integration of a semiconductor device.
申请公布号 JP2000058763(A) 申请公布日期 2000.02.25
申请号 JP19980230731 申请日期 1998.08.17
申请人 TOSHIBA CORP 发明人 MIMOTO KENICHIRO;HOJO TAKEHIKO
分类号 H01L21/822;H01L21/82;H01L23/528;H01L27/04 主分类号 H01L21/822
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