| 摘要 |
PROBLEM TO BE SOLVED: To form a metal oxide film having a good orientational property and good crystallinity on a plug at a low temperature, by forming the film in such a way that a metal organic material gas and an oxidizing gas are introduced to a vacuum vessel through different introducing ports while a substrate set up in the vessel is heated, and specifying the total pressure in the vessel. SOLUTION: A metal organic material gas is kept in a cylinder 501. The gas is supplied to a vacuum vessel by closing a valve 506 and opening another valve 507. The organic metal material gas and an oxidizing gas are separately introduced to the vacuum vessel through independent pipelines and mixed together for the first time in the vessel. The total pressure in the vacuum vessel is controlled to <=1×10-2 Torr by adjusting the evacuation rate of a sub-exhaust line and the flow rate of a mass flow controller 504. Therefore, ferroelectric films and high dielectric films having controlled orientational properties can be formed at low temperatures. In addition, the formed films do not cause much characteristic deterioration and have good crystallinity even when the thicknesses of the films are reduced. |
