发明名称 |
INSULATING FILM FOR THIN-FILM STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide an insulating film for thin-film structure, which has good resistance against cracking. SOLUTION: An insulating film for a thin-film structure is deposited on a glass board not substantially containing alkali metal consisting of alternately laid layers of aluminum oxide and titanium oxide and thereby an electroluminescence device is formed, wherein the insulating film is interposed as insulating layer between a fluorescent material and a dielectric substance layer. The ratio of the cumulated thickness of titanium oxide to the cumulated thickness of aluminum oxide in this insulating layer lies below 0.75.
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申请公布号 |
JP2000058269(A) |
申请公布日期 |
2000.02.25 |
申请号 |
JP19990213206 |
申请日期 |
1999.07.28 |
申请人 |
PLANAR SYST INC |
发明人 |
TORNQUIST RUNAR;PITKAENEN TUOMAS |
分类号 |
C03C17/34;H01B3/10;H01B3/12;H05B33/12;H05B33/22;(IPC1-7):H05B33/22 |
主分类号 |
C03C17/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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