发明名称 IMMERSION PROCESSING SYSTEM FOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To reduce running cost by suppressing consumption of processing liquid in an immersion processing system performing surface treatment of a semiconductor substrate, or the like, while preventing the size of the immersion processing system from increasing. SOLUTION: A liquid discharge path 42 led out from an overflow type substrate processing bath 1 is branched into a path being coupled with a drain 43 through a liquid discharge valve 47 and a processing liquid collecting path 21 being coupled with a processing liquid storage container 6 through a processing liquid collecting valve 44. Every time when a plurality of kinds of surface treatment are conducted, processing liquid flowing over the substrate processing bath 1 is collected in the storage container 6 through the processing liquid collecting valve 44 and reused. At the time of transfer from chemical processing to pure water processing, pure water is supplied under a state where the processing liquid is placed in the substrate processing bath. The processing liquid is overflowed and replaced by pure water and the substrate is kept away from the air thus preventing formation of oxide film on the surface of the substrate.
申请公布号 JP2000058492(A) 申请公布日期 2000.02.25
申请号 JP19990233723 申请日期 1999.08.20
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 MURAOKA YUSUKE;OSAKI TOSHIYUKI;SUGIMOTO KENJI;MAEKAWA NAOTADA
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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