| 摘要 |
PROBLEM TO BE SOLVED: To improve the etch selectivity of a silicon oxide film against other materials. SOLUTION: An amorphous silicon oxide film composed mainly of a siloxane bond (-Si-O-Si-) is etched by performing plasma treatment using only an inert gas, such as argon (Ar) gas as a raw material by adding a fluorocarbon-based side chain, such as carbon trifluoride (CF3-) in the silicon oxide film. Atom recombination reactions are accelerated by the action of argon ions generated by argon plasma and silicon fluoride (SiF4) and a carbon oxide (CO or CO2) are generated and discharged. When the substrate material of the silicon oxide film does not contain any fluorocarbon-based side chain, the substrate material is not etched by the argon ions and the etch selectivity of the silicon oxide film containing the fluorocarbon-base side chain is remarkably improved.
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