发明名称 PLASMA PROCESSING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a high-quality product in a short period at a low cost by setting the magnetic field practically weaker in the peripheral region of an inner space than at the center section in the region below an electroconductive coil, and exciting the process gas into a nearly uniform plasma with the magnetic field. SOLUTION: This plasma processing system contains an enclosure section 12 having an access section 14 formed in an upper wall 16. An insulating shield 18 is arranged below the upper wall 16 and extends across the access section 14. The insulating shield 18 is strongly stuck to the upper wall 16 to form the vacuum-withstanding interior 19 of the enclosure section 12. A planar coil 20 is arranged in the access section 14 adjacent to the insulating shield 18. The planar coil 20 is spirally formed and has a central tap 22 and an outside tap 24. The plane of the planar coil 20 is faced in parallel with the insulating shield 18 and a support mount face 13 mounting a semiconductor wafer W. The planar coil 20 generates planar plasma in the interior 19 of the enclosure 12 parallel with the semiconductor wafer W.
申请公布号 JP2000058297(A) 申请公布日期 2000.02.25
申请号 JP19990205255 申请日期 1999.07.19
申请人 LAM RES CORP 发明人 OGLE JOHN S
分类号 C23C16/505;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H05H1/46 主分类号 C23C16/505
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