| 摘要 |
PROBLEM TO BE SOLVED: To prevent a short failure caused by misalignment, by a method wherein self-aligned contact pads are formed in layers so as to be self-aligned with gate electrodes and bit lines. SOLUTION: Insulating-films 108 are formed on insulating films 104 including self-aligned contact pads E6 formed on a semiconductor substrate 100, and a material layer 114 in a certain etching selective ratio to the insulating film 108 is formed on the insulating film 108 so as to surround bit lines 112. Self- aligned contact pads 118 electrically connected to the self-aligned contact pads 106 are formed on each side of the bit lines 112. The self-aligned contact pads 106 and 118 are formed in two layers, whereby the contact pads are self-aligned with gate electrodes and the bit lines 112, and a short failure caused by misalignment can be prevented. |
