| 摘要 |
PROBLEM TO BE SOLVED: To reduce a heat treatment temperature for crystallization. SOLUTION: A ferroelectric material is deposited on an underlying material to form a provisional ferroelectric thin film. A tetravalent metal is added to the ferroelectric material. The provisional ferroelectric thin film is crystallized by a crystallization annealing to form a ferroelectric thin film. Since the tetravalent metal is added, a fluorite structure and a Bi layer structure are formed at a temperature lower than usual. The tetravalent metal is selected from Zr, Ti, Pb, Ce, Hf, Sn, and Sm. |
