| 摘要 |
PROBLEM TO BE SOLVED: To increase the reliability and the degree of integration of a semiconductor device without reducing a storage capacity value of a capacitive element for storing information. SOLUTION: Capacitive elements C for storing information, each constituted of a lower electrode 54, a capacity insulation film 62, and an upper electrode 63, are serially connected to MISFETQs for selecting memory cells formed on a principal plane of a semiconductor substrate 1. A semiconductor integrated circuit device includes a DRAM having such capacitive elements C for storing information. The capacity insulation film 62 is a three-layer film constituted of a silicon oxide-nitride film 58 in contact with the lower electrode 54, a polycrystalline tantalum oxide film 57 having a crystal structure, and a silicon oxide film 60 in contact with the upper electrode 63. |
