| 摘要 |
PROBLEM TO BE SOLVED: To achieve a Coulomb blockade element having a diverse connection structure operating at a high temperature by disposing with efficient space. SOLUTION: A silicon layer on an insulating film 51 is processed to a form having an extremely thin part 1 and thick film parts 2 to 4 thicker than the extremely thin part 1. When this structure is thermally oxidized, silicon regions 21, 22 of the extremely thin part and silicon region 32 to 34 of the thick film part are dislocated in the lateral direction and in the direction of the film thickness. Therefore, silicon that is narrower and thinner than the regions 21, 22 is formed at the boundary between the silicon regions 21, 22 of the extremely thin part and the silicon regions 32 to 34. Tunnel barriers are formed at both ends of the regions 21, 22, thus the regions 21, 22 become conductor islands. |
