发明名称 INTEGRATED SEMICONDUCTOR CHIP COMPRISING MODULAR FILLING STRUCTURE
摘要 PROBLEM TO BE SOLVED: To allow a substrate potential characteristics to be so constant as to cover the surface of an integrated semiconductor chip by providing many conductive contact points between a metal conductor path of metalized surface and a substrate, in the region of a chip surface where a filling structure extends. SOLUTION: Related to the region of a chip surface where modular filling structures 1-5 extend, many conductive contact points 1 are provided between a metal conductor path of a metalized surface 5 and a substrate 6. By connecting for conduction between the metal conductor path of the metalized surface 5 and the substrate 6 to cover the surface, the substrate potential is always kept to a reference potential. The voltage supply to all components provided on the substrate 6 is constant across the entire chip surface. Thanks to an even substrate potential, the line capacitance between a wiring surface 7 present at the filling structures 1-5 and the substrate 6 is distributed evenly across the entire chip surface. Thus, the wave-motion transfer characteristics of the wiring surface 7 becomes constant and improved. So, a chip operates with high reliability.
申请公布号 JP2000058766(A) 申请公布日期 2000.02.25
申请号 JP19990210855 申请日期 1999.07.26
申请人 SIEMENS AG 发明人 SAVIGNAC DOMINIQUE DR;SCHNEIDER HELMUT
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L23/485;H01L27/04;(IPC1-7):H01L27/04;H01L21/320 主分类号 H01L23/52
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