发明名称 |
METHOD FOR DEPOSITING FILM |
摘要 |
PROBLEM TO BE SOLVED: To obtain a high quality metal plating film having a large crystal grain size. SOLUTION: The method for depositing a film comprises a step for forming a first underlying part 12 of metal film having continuity on a substrate 11 to be processed, a step for forming a second underlying part 13 having discontinuity at least partially on the first underlying part using a metallic material, and a step for forming a metal plating film 14 on the substrate 11 to be processed where first and second underlying parts are formed.
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申请公布号 |
JP2000058485(A) |
申请公布日期 |
2000.02.25 |
申请号 |
JP19980227112 |
申请日期 |
1998.08.11 |
申请人 |
TOSHIBA CORP |
发明人 |
MATSUDA TETSURO;KANEKO HISAFUMI |
分类号 |
C23C18/16;C25D7/12;H01L21/288;H01L21/3205;(IPC1-7):H01L21/288;H01L21/320 |
主分类号 |
C23C18/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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