发明名称 METHOD FOR DEPOSITING FILM
摘要 PROBLEM TO BE SOLVED: To obtain a high quality metal plating film having a large crystal grain size. SOLUTION: The method for depositing a film comprises a step for forming a first underlying part 12 of metal film having continuity on a substrate 11 to be processed, a step for forming a second underlying part 13 having discontinuity at least partially on the first underlying part using a metallic material, and a step for forming a metal plating film 14 on the substrate 11 to be processed where first and second underlying parts are formed.
申请公布号 JP2000058485(A) 申请公布日期 2000.02.25
申请号 JP19980227112 申请日期 1998.08.11
申请人 TOSHIBA CORP 发明人 MATSUDA TETSURO;KANEKO HISAFUMI
分类号 C23C18/16;C25D7/12;H01L21/288;H01L21/3205;(IPC1-7):H01L21/288;H01L21/320 主分类号 C23C18/16
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