发明名称 EXPOSURE APPARATUS
摘要 PURPOSE: An exposure apparatus is provided to reduce an outline limitation of an interference system and an associated element with the interference system. CONSTITUTION: The scan exposure apparatus comprises: a wafer stage(7); a reticle stage(5); a projection optical system(9) for projecting an image of a reticle on a substrate of the wafer stage; an X-Y laser interference system(17) for measuring a location of the wafer stage in an X direction; a Z interference system(16) for measuring a location of the wafer stage in a Z direction; an X-Y laser interference system(41) for measuring a location of the wafer stage in X and Y directions; and a plurality of laser heads for generating a laser beam to be provided to an interference system. A reference signal(ref-in) is inputted from a laser head from remaining laser heads and synchronizes all laser heads.
申请公布号 KR20000011944(A) 申请公布日期 2000.02.25
申请号 KR19990030125 申请日期 1999.07.23
申请人 CANON KABUSHIKI KAISHA 发明人 TAKEISHI HIROAKI
分类号 G03F7/22;G03F7/20;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F7/22
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