| 摘要 |
PURPOSE: A doped short-channel device is provided to have a channel length shorter than 0.05 micrometer, and to maintain a threshold voltage to be able to accept. CONSTITUTION: A MOSFET device has a gate(10), a gate oxide layer(11), a source area(12) and a drain area(13). When the size of the MOSFET is reduced, the size of the oxide thickness(11) and a joining depth(15) is able to be desirably reduced, and a depletion area(16) is able to be effectively reduced by increasing a substrate doping. A hollow injecting unit(20) is; used to control a short channel effect when a channel length is reduced to 0.1 micrometer; a ring-shaped structure located between the source(12) and the drain(13) downward the oxide layer(11); to reduce the short channel effect by surrounding a source-drain extending unit not to infiltrate an electric force line.
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