| 摘要 |
PROBLEM TO BE SOLVED: To easily form a thin film transistor of excellent characteristics by forming an oxide insulating film on a lower side electrode by a sputtering method with a sputter gas containing a specified % or more of oxide gas, and forming an upper side electrode over it. SOLUTION: A dielectrics film 11 of a capacitor is formed by oxygen- sputtering method with a target of tantalum oxide. Over which, an insulating film of tantalum oxide is formed. To form an insulating film in an atmosphere containing 25% or less of Ar gas, a distance between a target a substrate is longer than when using 0% of Ar gas. Thus, an insulating film of almost the same quality as when formed with 0% of Ar gas is provided. A lower side electrode 10 of a capacitor 21 is formed using a silicon semiconductor doped with phosphorus. Over which, an upper electrode 12 is formed of a multi-layer film comprising aluminum or metal tantalum and aluminum, to constitute the capacitor 21. |
