| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal chemical vapor deposition device wherein film- forming which is conformal to a cylindrical capacitor structure or a trench of high-aspect ratio is allowed while excellent in crystallinity. SOLUTION: In a vapor deposition device wherein, with a reactive furnace 2 provided, a gas head 6 which blows a reactive gas and an oxidant gas into the furnace separately and a susceptor 10 wherein a substrate facing the gas head 6 is placed on the upper surface are provided in the reactive furnace 2 while the gas head 6 used in combination with a gas manifold 8, a column filling carburetor 30 for vaporizing a liquid reactive material is provided. The column filling carburetor 30 is connected to the gas manifold 8 by pipes 31 and 32 comprising, in the middle, a 3-way valve 34 with an exhaust pipe connected at an end, with a piping distance from the column filling carburetor 30 to the gas manifold 8 1 m or shorter. |
