| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress the reduction of high-frequency characteristics by forming a projecting part formed of insulation member at the connecting point on a substrate corresponding to the electrode of a semiconductor chip where the electrode side is directed to the substrate and connected therewith, and connecting the connection point of the chip with the connection point of the substrate through a through hole formed in the projecting part. SOLUTION: An electrode 2 of a semiconductor chip 2 is connected to an electrode 7 through a through hole 6 formed in the projection 5 on a mounting substrate 8 in a manner that the electrode side is directed to the mounting substrate 8. Owing to such a structure, a capacity space inside the semiconductor chip electrode 2 is made large, forming a space capacity to which no packaging resin 4 can enter. As a result, if the packaging resin 4 is injected from the peripheral part of a chip, it does not penetrate the inside of the semiconductor chip electrode 2 and a pattern on a semiconductor chip 1 is not covered with the packaging resin, and it is arranged in an air with low permittivity. Therefore, the reduction of high-frequency characteristics such as increase of capacity element, etc., can be suppressed.</p> |
