| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can prevent the generation of insulation separation caused by voids in a buried electrode in a trench. SOLUTION: In a trench formed in a silicon substrate 2, a first amorphous silicon film 26 is formed and then a silicon oxide film is formed on the first amorphous silicon film 26. After forming the silicon oxide film, the first amorphous silicon film 26 is heat-treated to be crystallized. Thereafter, the silicon oxide film is removed and then a second amorphous silicon film 30 is formed on the first amorphous silicon film 26 to fill the trench. |
