发明名称 |
ULTRA-THIN CAPACITOR AND DRAM |
摘要 |
PROBLEM TO BE SOLVED: To provide an ultra-thin capacitor for a DRAM. SOLUTION: A capacitor and a DRAM having this capacitor include a first layer 2 of a conductive doped perovskite material, a second layer 3 of an anti- conductive doped perovskite material, and a depletion layer 1 formed in the interface between the first and second layers made of the conductive perovskite material and constituting the insulating layer of the capacitor. |
申请公布号 |
JP2000058792(A) |
申请公布日期 |
2000.02.25 |
申请号 |
JP19990195787 |
申请日期 |
1999.07.09 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
DENNIS MELTON NEWNS |
分类号 |
H01L27/04;H01L21/02;H01L21/28;H01L21/822;H01L21/8242;H01L27/108;H01L29/12;H01L29/43;H01L29/92 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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