发明名称 ULTRA-THIN CAPACITOR AND DRAM
摘要 PROBLEM TO BE SOLVED: To provide an ultra-thin capacitor for a DRAM. SOLUTION: A capacitor and a DRAM having this capacitor include a first layer 2 of a conductive doped perovskite material, a second layer 3 of an anti- conductive doped perovskite material, and a depletion layer 1 formed in the interface between the first and second layers made of the conductive perovskite material and constituting the insulating layer of the capacitor.
申请公布号 JP2000058792(A) 申请公布日期 2000.02.25
申请号 JP19990195787 申请日期 1999.07.09
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 DENNIS MELTON NEWNS
分类号 H01L27/04;H01L21/02;H01L21/28;H01L21/822;H01L21/8242;H01L27/108;H01L29/12;H01L29/43;H01L29/92 主分类号 H01L27/04
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