| 摘要 |
PROBLEM TO BE SOLVED: To stabilize bonding of a narrow lead pitch and to prevent a package of a semiconductor device provided with a heat-radiation plate from cracking. SOLUTION: Related to a semiconductor device comprising a heat-radiation plate 13, a lead width W and lead plate thickness T at the tip end of the inner lead connected to a semiconductor chip is w<t, with an inner lead 4 fixed to the heat-radiation plate 13. Further, the heat-radiation plate 13 is supported by fixing to the inner lead 4, excluding a suspension lead. Lead pitch p, lead width w, and lead plate thickness t at the tip end of the inner lead connected to a semiconductor chip 1 is w<t, p<=1.2 t, with the inner lead fixed to the heat-radiation plate. Related to the heat-radiation plate, holes are so provided between a semiconductor chip mounting region and the inner lead that the heat-transfer channel of the heat-radiation plate becomes radial. Related to a semiconductor device wherein a semiconductor chip is fixed to the heat- radiation plate which is sealed with a sealing material, a plate thickness (t') at the tip end of the inner lead is thinner than a late thickness (t) at other part with the inner lead fixed to the heat-radiation plate. |
