| 摘要 |
PROBLEM TO BE SOLVED: To provide electrode structure where capability and reliability in an element can be improved in a power semiconductor element. SOLUTION: In a power semiconductor element, first electrodes 12 are installed on the surface of a semiconductor layer, interlayer insulating layers 11 are formed on the surfaces of the first electrodes 12, and a second electrode 10 is installed just above the first electrodes 11 on the surface of the interlayer insulating layers 11. Since the area utilization factor of the element is improved and the damage to bonding is relieved, the capability and reliability of the power semiconductor element can be improved. |
