SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PERFORMING A SHIFT REDUNDANCY OPERATION

摘要

PURPOSE: A semiconductor memory device is provided to repair a fail select line when two or more fail select lines are generated by a short circuit between select lines. CONSTITUTION: The semiconductor memory device comprises: a plurality of select lines(s10 to s1(n-1)) for reading or writing data by selecting a particular memory cell of plural memory cells on the basis of an address signal(Add) supplied from the exterior; at least first one redundancy select line(slj0) disposed at ends of the select lines; at least second one redundancy select line(slj1) disposed at the other ends of the select lines; and a switch circuit(2) for connecting a plurality of decode signal lines decoding the address signal(Add) so as to be replaced to the select lines and the redundancy select lines, wherein when a fail is generated at the plurality of select lines, a first switching operation for shifting at least one of the decode signal lines to a direction of the first redundancy select line or a second switching operation for shifting at least one of the decode signal lines to a direction of the second redundancy select line is performed, or the first and second switching operations are performed.