| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable and high output semiconductor laser device, by a method wherein the free carrier absorption loss and the leak current of the current block layer formed on both sides of an active layer in the semiconductor laser device formed by a compound semiconductor are reduced. SOLUTION: In this semiconductor laser device wherein at least an i-InGaAsP active layer 13 is formed on an n-InP substrate 11 and a p-InP current block layer 15 is formed in such a manner that the active layer 13 is pinched, the impurity density of the current block 15 becomes low in the vicinity of the active layer 13, and the impurity density becomes high on the part away from the active layer 13 by changing the growth condition of an organic metal vapor phase growth equipment (MOVPE) when the current block layer 15 is formed. According to this semiconductor laser device, the free carrier absorption loss of the current block layer 15 can be reduced in the vicinity of the active layer 13 without lowering the withstand voltage of the unit block layer 15, optical output can be increased and high reliability can be obtained.
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