| 摘要 |
PURPOSE: A SOI wafer production method is provided to reduce production cost of wafer with uniform thickness of the film by forming a silicon film on the SOI wafer. CONSTITUTION: The SOI wafer is produced in the process of: step 1, preparing two silicon mirror wafers(20)(21) and treating the wafer to a thermal oxidation, forming an oxide film(30) on the surface, injecting a hydrogen ion or a gas ion and forming a fine bubble layer(40); step 2, sticking tight a wafer(21) with an oxide film(30) and performing a heat treatment for de-lamination to separate an upper silicon layer from the lower SOI wafer(10). By thermo treating a tight stuck wafer in 1050°C-1200°C an adhering strength is improved. |
