发明名称 |
THIN FILM TRANSISTOR AND ITS MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To form a semiconductor film having uniform film quality. SOLUTION: A semiconductor film having uniform film quality is formed by a first process where the semiconductor film is formed on a substrate 100; a second process where a laser beam whose total energy is not less than 5J and whose pulse width is not less than 100 nsec is radiated for one shot or a plurality of shots, and a high crystallized semiconductor film is formed, and a third process where the relative position of the semiconductor film and the laser beam is changed and the second process is repeated in a part different from a part of the semiconductor film. A thin film transistor having the semiconductor film and an active layer has a high characteristic without dispersion.
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申请公布号 |
JP2000058835(A) |
申请公布日期 |
2000.02.25 |
申请号 |
JP19980218380 |
申请日期 |
1998.07.31 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN;HAYASHI YOSHISUKE |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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