发明名称 THIN FILM TRANSISTOR AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To form a semiconductor film having uniform film quality. SOLUTION: A semiconductor film having uniform film quality is formed by a first process where the semiconductor film is formed on a substrate 100; a second process where a laser beam whose total energy is not less than 5J and whose pulse width is not less than 100 nsec is radiated for one shot or a plurality of shots, and a high crystallized semiconductor film is formed, and a third process where the relative position of the semiconductor film and the laser beam is changed and the second process is repeated in a part different from a part of the semiconductor film. A thin film transistor having the semiconductor film and an active layer has a high characteristic without dispersion.
申请公布号 JP2000058835(A) 申请公布日期 2000.02.25
申请号 JP19980218380 申请日期 1998.07.31
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KOYAMA JUN;HAYASHI YOSHISUKE
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
代理机构 代理人
主权项
地址