| 摘要 |
PROBLEM TO BE SOLVED: To suppress sub-threshold coefficient and off-leak current of a semiconductor device operating at a low voltage. SOLUTION: The method for fabricating a semiconductor device comprises steps for forming an N type semiconductor region 102, a field oxide film 103 and a gate oxide film 104, implanting high energy ions and low energy ions, forming a gate electrode, forming source and drain by implanting ions using the gate electrode as a mask, making a contact hole, forming an interconnection and then forming a final protective film through final heat treatment. A P type semiconductor region for forming an N type insulated gate field effect transistor employs high energy ion implantation in order to attain such a concentration profile as having peaks in the vicinity of source and drain thereof and the final heat treatment is carried out in hydrogen atmosphere of about 430 deg.C.
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