| 摘要 |
PROBLEM TO BE SOLVED: To prevent a metallic wiring film to be used as an electrode from penetrating a contact area in a double polysilicon bipolar transistor semiconductor device. SOLUTION: In a collector electrode using an npn transistor or a base electrode using a pnp transistor, a side wall 12 is formed as an insulation film on the side wall of opening of each electrode, and a polysilicon film 13 containing impurities is formed as an electrode layer, and then a metallic electrode layer 15 made of Al, etc., is formed thereon. Thus, the metallic wiring layer 15 made of Al, etc., can be prevented from penetrating a contact area, and further a contact section between the electrode wiring layer and contact area can be formed densely, reducing the contact resistance.
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