| 摘要 |
PROBLEM TO BE SOLVED: To manufacture nitride based III-V compound semiconductor in which non-luminescence center is few and crystallinity is superior. SOLUTION: In this method, a nitride based III-V compound semiconductor is manufactured by vapor deposition using material of a group III element, ammonia as material of group V element and hydrogen. Vapor phase mol. ratio (H2/(H2+NH3) of hydrogen to the total amount of hydrogen and ammonia is specified as 0.3<(H2/(H2+NH3)<0.7, 0.3<(H2/(H2+NH3)<0.6 or 0.4<(H2/(H2+NH3)<0.5. |
