| 摘要 |
PROBLEM TO BE SOLVED: To realize current constriction ideal for active layer by an arrangement wherein three semiconductor layers constitute at least a part of double heterostructure and the light emitting direction is aligned with the stripe direction of an opening. SOLUTION: After forming an n-type GaN contact layer 32, an n-type Al0.07 Ga0.93N clad layer 33 and an n-type GaN optical guide layer 34 sequentially on a sapphire substrate 31, an SiO2 mask 35 having a stripe-like opening in the crystal direction is formed. Subsequently, an n-type GaN optical guide layer 37 is grown selectively in the opening 36 of the SiO2 mask 35 followed by growth of a multiple quantum well structure active layer 38, a p-type GaN optical guide layer 39, a p-type clad layer 40, and a p-type GaN contact layer 41. When an opening is made subsequently in the n-type layer using the SiO2 mask 35 and an active layer and a p-type layer are formed on the periphery of the opening 36 by selective growth, current constriction for the active layer 38 can be performed in the SiO2 mask 35. |
