| 摘要 |
PROBLEM TO BE SOLVED: To optimize the luminous efficiency of a light emitting element which comprises an AlGaInP active region. SOLUTION: In a light emitting element, an element layer which comprises a total absorbance is formed on a semiconductor substrate which is of a first conductivity type. In the element layer, a first-conductivity-type AlGaInP alloy lower-part confinement layer 14A which is formed on the substrate is contained, an AlGaInP active region 12 which is formed on the lower-part confinement layer 14A and which has an absorbance of less than 0.2 is contained, and a second-conductivity-type AlGaInP alloy upper-part confinement layer 14B which is formed on the active region 12 is contained. The absorbance of the active region 12 is at least one-fifth of a total absorbance. As desired a blocking layer 16 is inserted between the active region 12 and the confinement layer 14B, and the characteristic of the light emitting element can be improved. |
